强激光与粒子束
2023, 35(5): 059001
Author Affiliations
Abstract
1 Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
2 Engineering Research Center on Visible Light Communication of Guangdong Province, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
3 Key Laboratory of Visible Light Communications of Guangzhou, Jinan University, Guangzhou 510632, China
4 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
5 e-mail: zhuwg88@163.com
In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage for the phase modulator. Here, an integration of the monolayer graphene onto the side-polished optical fiber is demonstrated, which is capable of providing a cost-effective strategy to enhance the light–graphene interaction, allowing us to obtain a highly efficient optical absorption in graphene and achieve multifunctions: photodetection and optical phase modulation. As a photodetector, the device has ultrahigh responsivity () and high external quantum efficiency (). Additionally, the polybutadiene/polymethyl methacrylate (PMMA) film on the graphene can render the device an optical phase modulator through the large thermo-optic effect of the PMMA. As a phase modulator, the device has a relatively low half-wave voltage of 3 V with a 16 dB extinction ratio in Mach–Zehnder interferometer configuration.
Photonics Research
2020, 8(12): 12001949
1 工业和信息化部电子第五研究所 电子元器件可靠性物理及其应用技术重点实验室, 广东 广州 510610
2 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室, 上海 200083
红外焦平面器件广泛应用于**安全、空间探测、环境监测、工业控制等各个领域, 但是由于量少价高的特点, 可靠性成为其技术发展的主要瓶颈之一。盲元是红外焦平面的失效像元, 是对器件工作特性的反映, 因此, 可以用作可靠性评价和失效分析手段的重要参数。以出厂时间为界, 将盲元分为初始盲元和使用盲元, 并分析了其类型、性质、数量、位置及分布等方面的特征。根据红外焦平面器件结构特点, 从探测器、互联铟柱和读出电路三个方面分析了盲元形成原因, 全面探讨了盲元分析在研究器件损伤应力、失效位置、损伤机理上的应用, 以及准确评价器件性能和提高盲元剔除精度的可行性, 为器件结构的优化和工艺的改进提供了支撑。
盲元 红外焦平面 可靠性 失效分析 性能评价 bad pixel IRFPA reliability failure analysis performance evaluation 红外与激光工程
2016, 45(5): 0504004
1 工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室, 广东 广州 510610
2 工业和信息化部电子第五研究所可靠性研究分析中心, 广东 广州 510610
3 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室, 吉林 长春 130033
对磷锗锌晶体光学薄膜激光损伤的机理进行了实验和理论研究。将同一批生长的磷锗锌晶体切割为6 块，并利用相同的工艺对这些晶体进行抛光；对其中4只样品镀制双波段多层增透膜，利用扫描电子显微镜观察这4只样品的光学薄膜形貌，发现薄膜的大部分区域成膜质量较好，但也有小部分区域形成团簇；利用二次离子质谱仪分析了薄膜的组成成分，发现在该薄膜的ZrO2层含有Pt元素；利用波长为2 μm、脉宽为31 ns的固体激光器对磷锗锌晶体样品进行激光损伤阈值测试，得出4只镀膜样品的激光损伤阈值平均值为0.68 J/cm2，其他2只未镀膜样品的损伤阈值平均值为1.1 J/cm2。利用有限元仿真方法计算了杂质作用下薄膜的激光损伤阈值，研究了杂质颗粒的半径和填埋深度对损伤阈值的影响，计算了薄膜的理论激光损伤阈值，证明了Pt杂质颗粒的存在对磷锗锌晶体表面增透膜的激光损伤阈值有很大影响，所以控制该杂质的浓度对提高薄膜的损伤阈值具有重要意义。
薄膜 激光损伤 杂质诱导 磷锗锌晶体 有限元仿真
1 长春理工大学高功率半导体激光器国家重点实验室, 吉林 长春 130022
2 工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室, 广东 广州 510610
为了探索和验证半导体激光器电导数参数与其可靠性的关系，将12 个半导体激光器串联后进行高温加速电老化，直到器件不激射。监测在加速老化过程中半导体激光器电导数参量的变化情况。通过分析老化期间监测的数据，发现电导数曲线在阈值电流处的下沉高度随着老化时间的增加而变小；结特征参量与电导数曲线（在大于阈值电流的工作状态下）在电流I=0 处的截距值随着老化过程逐渐变大。并且结特征参量的变化量在早期处于比较小的平稳状态，然后快速增加到一定值并保持一段时间，之后快速下降并最终稳定在比较小的值，这说明器件退化分为3 个阶段：在早期退化较慢，之后退化很快并保持一定的退化速度，最后又到了慢速退化期。从实验结果得知电导数参量与器件的寿命和老化程度有密切关系，并且电导数参数可表征半导体激光器的退化状态。
激光器 半导体激光器 可靠性 电导数 加速老化 激光与光电子学进展
2015, 52(4): 041404
工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室, 广东 广州 510610
为获得808 nm单巴条(bar)大功率半导体激光器寿命指标，研制了10工位大功率半导体激光器寿命实验在线监测系统，完成了3组寿命评价实验，这3组实验条件分别为温度25 ℃、电流100 A，温度50 ℃、电流100 A，温度50 ℃、电流115 A。采用线性回归分析、最小二乘法原理及拟合优度检验等统计学相关知识，获得了单bar大功率半导体激光器的功率退化模型，基此确定大功率半导体激光器的外推寿命为2.86×109次脉冲次数。同传统加速寿命评价实验方法相比，基于参数退化模型的寿命外推方法具有寿命评价时间短、准确性高的优点。
激光器 半导体激光器 寿命 失效机理 可靠性 光学学报
2013, 33(s1): s114003
Author Affiliations
Abstract
1 National Key Lab on High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
2 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
High-power vertical-cavity surface-emitting lasers (VCSELs) are processed using a wet thermal-selective oxidation technique. The VCSEL chips are packaged by employing three different bonding methods of silver solder, In-Sn solder, and metalized diamond heat spreader. After packaging, optical output power, wavelength shift, and thermal resistance of the devices are measured and compared in an experiment. The device packaged with a metalized diamond heat spreader shows the best operation characteristics among the three methods. The 200 \mu m-diameter device bonded with a metalized diamond heat spreader produces a continuous wave optical output power of 0.51 W and a corresponding power density of 1.6 kW/cm2 at room temperature. The thermal resistance is as low as 10 K/W. The accelerated aging test is also carried out at high temperature under constant current mode. The device operates for more than 1000 h at 70 ℃, and the total degradation is only about 10%.
垂直腔面发射激光器 氧化技术 焊接技术 热阻 老化实验 250.5960 Semiconductor lasers 250.7260 Vertical cavity surface emitting lasers 140.7260 Vertical cavity surface emitting lasers Chinese Optics Letters
2010, 8(6): 595
Author Affiliations
Abstract
1 State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2 Graduate School of the Chinese Academy of Sciences, Beijing 100039
High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.
140.5960 Semiconductor lasers 310.1620 Interference coatings 040.1240 Arrays 140.3290 Laser arrays Chinese Optics Letters
2007, 5(s1): 154
Author Affiliations
Abstract
1 State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2 Graduate School of the Chinese Academy of Sciences, Beijing 100039
The design, fabrication, and characteristics calculation of 980-nm optically pumped semiconductor disk laser are reported. The laser combines a vertical cavity semiconductor laser with a partically reflecting out coupler and an external cavity for mode control. Pumped by 808-nm diode laser, the disk laser directly generates a linearly polarized, circularly symmetric, diffraction-limited beam with watt-level power. Calculation shows the laser with active region of InGaAs/GaAsP/AlGaAs system can operate at near 500-mW in a single transverse mode.
140.3480 Lasers, diode-pumped 140.5960 Semiconductor lasers Chinese Optics Letters
2007, 5(s1): 151
1 长春理工大学高功率半导体激光国家重点实验室，长春 130022
2 沈阳化工学院材料科学与工程学院，沈阳 110142
3 中国科学院长春光学精密机械与物理研究所，长春 130033
从InGaAsP－InP单量子阱激光器结构分析入手，采用自行设计的热封闭系统对808nmInGaAsP－InP单量子阱激光器热特性进行了研究．实验表明，在23－70℃的温度范围内，器件的功率由1．74W降到0．51W，斜率效率由1．08W／A降到0．51W／A．实验测得其特征温度T0为325K．激射波长随温度的漂移dλ／dT为0．44nm／℃．其芯片的热阻为3．33℃／W．
单量子阱激光器 热特性 特征温度 SQW Laser 808 nm 808nm InGaAsP－InP InGaAsP-InP Thermal characteristics Characteristic temperature
